GT Advanced Technologies (GTAT) Inc. produces polysilicon, silicon carbide and sapphire crystal materials for expanding markets such as electric vehicles, power electronics, aerospace and 5G telecom. Silicon carbide is used for semiconductors because it has power-handling capabilities that exceed basic silicon.

Avid has participated in the successful design/ construction of numerous crystal growth facilities and has consulted for a variety of the world’s leading manufacturers. Facilities designed include multi crystalline silicon ignot growth furnaces, advanced sapphire growth furnaces, mono crystalline Czochralski process and crystal growth pullers. Sample projects include: A 100 Furnace – Advanced Sapphire Growth Boule Production/Fabrication/Testing Facility in Salem, MA. A 40-MW Silicon Ingot Growth/Wafering Photovoltaic Module Formation Facility in Patras, Greece. A Best-In-Class, Crystal Growth Research and Development Facility in Merrimack, NH. A 1-million-SF Sapphire growth facility in Mesa AZ.